首页> 外国专利> ETCH PROCESS CONTROL USING OPTICAL METROLOGY AND SENSOR DEVICES

ETCH PROCESS CONTROL USING OPTICAL METROLOGY AND SENSOR DEVICES

机译:使用光学计量学和传感器设备进行蚀刻过程控制

摘要

Provided is a method and system for controlling a fabrication cluster for processing of a substrate in an etch process, the fabrication cluster having equipment settings and process parameters. A correlation of etch stage measurements to actual etch stage data is developed, the etch stage measurements comprising measurements using two or more optical metrology devices and an etch sensor device. An etch stage value is extracted using the developed correlation and the etch stage measurement. If the etch stage measurement objectives are not met, the metrology devices are modified, a different etch sensor device is selected, the etch stage measurements are enhanced, and/or the correlation algorithm is refined. The steps are iterated until the etch stage measurement objectives are met. The extracted etch stage value is used to adjust an equipment setting and/or process parameter of the fabrication cluster.
机译:提供一种用于控制制造簇以在蚀刻工艺中处理衬底的方法和系统,该制造簇具有设备设置和工艺参数。开发了蚀刻阶段测量值与实际蚀刻阶段数据的相关性,该蚀刻阶段测量值包括使用两个或更多个光学计量设备和蚀刻传感器设备的测量值。使用所建立的相关性和蚀刻阶段测量来提取蚀刻阶段值。如果不满足蚀刻阶段测量目标,则修改度量衡设备,选择不同的蚀刻传感器设备,增强蚀刻阶段测量,和/或改进相关算法。重复这些步骤,直到达到蚀刻阶段的测量目标。提取的蚀刻阶段值用于调整制造簇的设备设置和/或工艺参数。

著录项

  • 公开/公告号KR20140006039A

    专利类型

  • 公开/公告日2014-01-15

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LIMITED;

    申请/专利号KR20137024624

  • 发明设计人 MADRIAGA MANUEL;TIAN XINKANG;

    申请日2012-02-17

  • 分类号C23F1;H01L21/302;

  • 国家 KR

  • 入库时间 2022-08-21 15:43:53

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号