SOLUBILITY-IMPROVED HIGH ETCH-RESISTANT CONDENSATION POLYMER FOR CARBON HARD MASK AND CARBON HARD MASK COMPOSITION INCLUDING SAME, METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE USING SAME

摘要

A polymer for a carbon hard mask and a carbon hard mask prepared using a composition including the same of the present invention can provide patterns which are not affected by refining waves by absorbing light when photoresist patterns are formed, enhances an etching-selection ratio after lithography, and has multi-etching resistance. The composition for a carbon hard mask of the present invention is applied by a spin coater and reduces process time and costs by improving nozzle clogging due to the enhanced solubility.