ZINC OXIDE-BASED SPUTTERING TARGET, METHOD FOR MANUFACTURING ZINC OXIDE-BASED SPUTTERING TARGET, AND THIN FILM TRANSISTOR WITH SHIELDING LAYER DEPOSITED BY METHOD FOR MANUFACTURING ZINC OXIDE-BASED SPUTTERING TARGET

摘要

The present invention relates to a zinc oxide-based sputtering target, a method for manufacturing the zinc oxide-based sputtering target, and a thin film transistor with a shielding layer deposited by the method and, more specifically, to a zinc oxide-based sputtering target, a method for manufacturing the zinc oxide-based sputtering target, and a thin film transistor with a shielding layer deposited by the method capable of performing DC sputtering and increasing contacting and etching performances of the shielding layer deposited by the DC sputtering. The zinc oxide-based sputtering target comprises a sintered body which is made of zinc oxide doped with indium(III) oxide of 1-50 wt%; and a backing plate which is coupled to a rear surface of the sintered body to support the sintered body.;COPYRIGHT KIPO 2014