METHOD OF FABRICATING N-TYPE SEMICONDUCTOR USING N-DOPED REDUCED GRAPHENE OXIDE

摘要

According to an embodiment of the present invention, nitrogen-doped reduced graphene oxide (N-doped rGO) and a method of fabricating n-type semiconductor using the same comprise: a step for creating a graphene oxide (GO); a step for creating partially reduced graphene oxide (PrGO-IL) by reacting the graphene oxide (GO) and ionic liquid to an organic solvent; a step for applying the partially reduced graphene oxide (PrGO-IL) to a substrate by a spin-coating method; and a step for creating N-doped rGO by annealing the applied PrGO-IL. Therefore, n-type semiconductor can be manufactured using N-doped rGO, and application to complementary circuit is possible by integrating with ordinary p-type graphene.