Operation of an electronic circuit with body controlled double channel transistor and the sram cell with body controlled double channel transistor

摘要

A method for operating an electronic circuit with a first double-channel field effect transistor with:a drain region and a source region with a first conductivity type;a body area, the at least between the drain region and the source region is formed, wherein said body area has a second conductivity type, which differs from the first conductivity type;a gate electrode, which via a channel region of the body region is provided, wherein the gate electrode of the channel region is separated by an insulating layer and the gate electrode with the drain region or the source region is connected;a doped region between the drain region and the source region is arranged and the first conductivity type has;a body terminal, and connected with the body area is designed to receive a variable control voltage;a circuit element which is connected with the field effect transistor; anda signal input connection, which is connected to the body terminal; andthe method comprising:The application of a variable control voltage to the signal input connection, andCoupling of the drain region or of said source region which does not interfere with the gate electrode, is connected to a power supply voltage or ground potential.