Body contact for the SRAM cells with the double-channel transistor

摘要

Solutions Although it is possible, with configuration of dummy gate electrode structure (205A) can be categorized to cross direction the body contact between two double channel transistors and can being based on two double channel transistors (200N and 200P), and the choice transistor (200S) to form the static RAM electrolysis cell (250), the further rectangular contact (230) the gate electrode, it can do the source field and to joint the body contact conductivity pass to the body field of the transistor is established with that. This way, by comparison with the former body contact, it can establish quite three-dimensional efficient structure, it is possible to raise the bit density in the static RAM electrolysis cell remarkably. Choice figure Figure 2g