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oxide film-precipitation method and oxide film-precipitation device

机译:氧化膜沉淀方法及氧化膜沉淀装置

摘要

This invention provides a process for the formation of an oxide film, through which the normal form of an oxide film always is achieved without the influence of a change in the atmosphere, as a result of which a metal oxide film formed with a low resistance can be formed and a high efficiency of the film formation is achieved. According to the invention, a mist of a stock solution is formed, which contains an alkyl compound and on a substrate (100) in the atmosphere is ejected. In addition, an oxidizing agent, which is an oxidizing effect on the alkyl compound, is guided to the mist of the stock solution. By the above-described method, an oxide film on the substrate of this invention is formed.
机译:本发明提供了一种形成氧化膜的方法,通过该方法始终可以实现氧化膜的正常形式而不受大气变化的影响,结果,可以形成具有低电阻的金属氧化膜。从而形成高效率的膜形成。根据本发明,形成了储备溶液的薄雾,其包含烷基化合物并且在大气中被喷射到基板(100)上。另外,对烷基化合物具有氧化作用的氧化剂被引导至储备溶液的雾中。通过上述方法,在本发明的基板上形成氧化膜。

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