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oxide film-precipitation method and oxide film-precipitation device
oxide film-precipitation method and oxide film-precipitation device
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机译:氧化膜沉淀方法及氧化膜沉淀装置
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摘要
This invention provides a process for the formation of an oxide film, through which the normal form of an oxide film always is achieved without the influence of a change in the atmosphere, as a result of which a metal oxide film formed with a low resistance can be formed and a high efficiency of the film formation is achieved. According to the invention, a mist of a stock solution is formed, which contains an alkyl compound and on a substrate (100) in the atmosphere is ejected. In addition, an oxidizing agent, which is an oxidizing effect on the alkyl compound, is guided to the mist of the stock solution. By the above-described method, an oxide film on the substrate of this invention is formed.
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