首页> 外国专利> Magnetron sputtering device, useful in plant for treating strip-like substrate, comprises anode housing as etching surface of first surface of substrate to be treated, and magnet arrangement as second etching surface of substrate

Magnetron sputtering device, useful in plant for treating strip-like substrate, comprises anode housing as etching surface of first surface of substrate to be treated, and magnet arrangement as second etching surface of substrate

机译:在用于处理带状基板的工厂中有用的磁控溅射装置,其包括阳极壳体作为要处理的基板的第一表面的蚀刻表面,以及磁体布置作为基板的第二蚀刻表面。

摘要

The magnetron sputtering device comprises an anode housing as an etching surface of a first surface of a substrate (5) to be treated, and a magnet arrangement (4) as a second etching surface of substrate opposite to the first surface. The magnet arrangement forms a substrate penetrating magnetic field such that a circumferentially closed tunnel of magnetic field lines is created over the etched surface. The anode housing is designed as a metallic anode (2) with an anode potential, and comprises a dark field shield covering the etched surface. The magnetron sputtering device comprises an anode housing as an etching surface of a first surface of a substrate (5) to be treated, and a magnet arrangement (4) as a second etching surface of substrate opposite to the first surface. The magnet arrangement forms a substrate penetrating magnetic field such that a circumferentially closed tunnel of magnetic field lines is created over the etched surface. The anode housing is designed as a metallic anode (2) with an anode potential, and comprises a dark field shield covering the etched surface. A partially adjacent cathode potential is provided on the substrate and in the dark-field shield. The dark-field shield is formed with an input and/or output-side substrate passage opening of the device such that the substrate is arranged transverse to its transport direction. A part of the dark field shield is movable so that a substrate distance is adjusted. Units are provided such that the substrate distance is reduced to a predetermined minimum distance depending on the position of the substrate, and comprise a measuring unit for detecting the position of the substrate with respect to a portion of the apparatus and a lifting unit for moving a part of the device. The dark-field shield, anode housing and/or magnet arrangement is movable by the lifting unit. The cathode potential lies at ground so that the cathode potential equals to a potential of the housing of the device. The anode housing is sucked by openings of the anode housing. The housings are arranged between two webs, and are formed to electrically insulated from the dark-field shield. The web is formed as a plate or as a strip-shaped element, which is arranged parallel to the substrate, is provided in the part of the dark field shield, and is located between the substrate and the opening. An intermediate potential is applied on the web, and is greater than the cathode potential and lower than the anode potential. The measuring unit comprises a mechanical part contacted to the etched surface so that the position of the etched surface is determined. The lifting unit is a spring and a drive element movable to orthogonal to the etched surface for the mechanical detection of the measuring unit, and is configured to bring the part of the device to an equi-distant location to the substrate. The measuring unit is performed by raising an electrical measuring signal so that the position of the etched surface is determined. A mechanical contact is made via rollers, brushes or graphite. The part of the shield is moved at the opening, and includes a screening roller. The magnet arrangement is arranged within a treatment roller over which the band-shaped substrate is passed. An independent claim is included for a system for vacuum treatment of substrates.
机译:磁控溅射装置包括:阳极壳体,其作为要处理的基板(5)的第一表面的蚀刻表面;以及磁体装置(4),其是与第一表面相对的基板的第二蚀刻表面。磁体装置形成穿透磁场的衬底,使得在蚀刻的表面上方形成磁场线的周向闭合的隧道。阳极壳体被设计为具有阳极电位的金属阳极(2),并且包括覆盖蚀刻表面的暗场屏蔽。磁控溅射装置包括:阳极壳体,其作为要处理的基板(5)的第一表面的蚀刻表面;以及磁体装置(4),其是与第一表面相对的基板的第二蚀刻表面。磁体装置形成穿透磁场的衬底,使得在蚀刻的表面上方形成磁场线的周向闭合的隧道。阳极壳体被设计为具有阳极电位的金属阳极(2),并且包括覆盖蚀刻表面的暗场屏蔽。在衬底上和暗场屏蔽中提供部分相邻的阴极电势。暗场屏蔽形成有装置的输入侧和/或输出侧基板通过开口,使得基板横向于其传送方向布置。暗场屏蔽的一部分是可移动的,从而可以调节基板距离。提供单元,以使衬底距离根据衬底的位置减小到预定的最小距离,并且包括用于检测衬底相对于设备的一部分的位置的测量单元以及用于移动衬底的升降单元。设备的一部分。暗场屏蔽,阳极壳体和/或磁体装置可通过提升单元移动。阴极电势位于地,因此阴极电势等于设备外壳的电势。阳极壳体被阳极壳体的开口吸引。壳体布置在两个腹板之间,并且形成为与暗场屏蔽电绝缘。腹板形成为平行于基板布置的板状或带状元件,其设置在暗场屏蔽的部分中,并且位于基板与开口之间。中间电势施加在幅材上,该中间电势大于阴极电势且低于阳极电势。测量单元包括与蚀刻表面接触的机械部件,从而确定蚀刻表面的位置。提升单元是弹簧和驱动元件,其可移动到正交于蚀刻表面以用于测量单元的机械检测,并且被配置为将装置的一部分带到与基板等距的位置。通过发出电测量信号来执行测量单元,以便确定蚀刻表面的位置。机械接触通过辊,刷子或石墨进行。防护罩的一部分在开口处移动,并包括一个筛选辊。磁体装置布置在处理辊内,带状基体通过该处理辊。包括对基板进行真空处理的系统的独立权利要求。

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