Substrate treating apparatus for etching the back-side surface of substrate and method of treating substrate with using this

摘要

A semiconductor substrate processing apparatus capable of etching a bottom surface of a substrate and a semiconductor substrate processing method using the same, the semiconductor substrate processing apparatus comprising: a process chamber for providing a chemical reaction space; A susceptor body located in the reaction space and having a seating surface on which the semiconductor substrate is placed, the susceptor body having a gas ejection portion for ejecting an etching gas onto a lower surface of the semiconductor substrate; And a susceptor shaft for supporting the susceptor body and having a gas supply pipe for supplying an etching gas to the gas spraying portion. The semiconductor substrate processing apparatus according to claim 1, According to the present invention, an upper or lower surface of a semiconductor substrate is selectively etched by using an etching gas such as hydrochloric acid (HCl) gas or chlorine (Cl ₂ ) gas in a semiconductor growth apparatus capable of inducing a nitrogen atmosphere The semiconductor device or the semiconductor substrate can be manufactured more efficiently by simultaneously etching the upper and lower surfaces of the semiconductor substrate.