Vacuum processing of substrates for treating substrate, comprises igniting magnetron discharge by supplying e.g. inert working gas, displacing first plasma zone, igniting additional magnetron discharge and concentrating second plasma zone

摘要

Vacuum processing of substrates for treating a substrate (1) by a plasma device, comprises: igniting a magnetron discharge by supplying inert working gas and reactive gas; displacing first plasma zone (5) on a self-contained web over the substrate; igniting an additional magnetron discharge within the dark-field shielding; and concentrating the second plasma zone on the surface of the substrate facing the counter electrode by a second magnet system, which is associated with the counter electrode. The pair of electrodes is operated with a voltage. Vacuum processing of substrates for treating a substrate (1) by a plasma device, which comprises a magnetron electrode having a first magnet system (4) and electrode disposed adjacent to a substrate, a substrate as an electrode which are collectively referred to a substrate electrode (2), at least one counter electrode, and a dark-field shield for limiting the extent of plasma, comprises: igniting a magnetron discharge by supplying inert working gas and reactive gas; displacing first plasma zone (5) on a self-contained web over the substrate; igniting an additional magnetron discharge within the dark-field shielding; and concentrating the second plasma zone on the surface of the substrate facing the counter electrode by a second magnet system, which is associated with the counter electrode. The pair of electrodes is operated with a voltage, such that the plasma burns alternately across the substrate and the counter electrode. An independent claim is also included for a device for vacuum processing of substrates with a plasma device, comprising a magnetron electrode comprising a first magnetic system, electrode disposed adjacent to a substrate, a substrate as an electrode which are collectively referred to substrate electrode, at least one counter electrode, a power source for the counter electrode and/or the electrode or the substrate electrode, a dark field shield for limiting the plasma expansion, and a gas supply means for supplying working gas or reactive gas. The dark-field shield and a second magnet system having at least a north and a south pole are disposed after the counter-electrode, which is on the a substrate side remote from the concentration of plasma on the surface of the counter electrode.