首页> 外文会议>Intl Conf of Microelectronics >Vacuum-plasma deposition of resist film on substrate by means of copolymerization of monomers in the afterglow zone of rf discharge
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Vacuum-plasma deposition of resist film on substrate by means of copolymerization of monomers in the afterglow zone of rf discharge

机译:通过射频放电余辉区中单体的共聚,在基板上进行抗蚀剂膜的真空等离子体沉积

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Abstract: The plasma polymerization is one of the methods of resist film coating. It is known that polymer deposition rate has maximum value in the glow zone of discharge (GZD). But the activation of monomer molecules in GZD may lead to their considerable destruction. To keep the initial molecular structure of at least one monomer, the following experiment on copolymerization of two monomers was carried out. Inside the flowing tube reactor, the vapor of one monomer (for example, xylene) was filled in the glow zone of argon plasma, and the vapor of another monomer, (methyl methacrylate) was filled outside this zone in the lower part of the gas flow. The silicon substrate was placed perpendicularly to the reactor axis under GZD. The thickness of the polymer film was controlled by means of a laser interferometer. The experiment revealed that the film deposition rate is significantly greater for copolymerization of two monomers than for polymerization of each monomer separately when another one is not filled. Thus, the principal possibility of copolymerization of monomers in the after glow zone of discharge (AGZD) has been demonstrated. Moreover, only one monomer is activated in the plasma during this process, while the structure of another one is preserved. !6
机译:【摘要】等离子体聚合是抗蚀剂涂膜的方法之一。已知聚合物沉积速率在放电辉光区(GZD)具有最大值。但是,GZD中单体分子的活化可能导致其大量破坏。为了保持至少一种单体的初始分子结构,进行了以下两种单体共聚的实验。在流管式反应器内部,一种单体(例如,二甲苯)的蒸气填充在氩气等离子体的辉光区中,另一种单体(甲基丙烯酸甲酯)的蒸气填充在该区的气体下部。流。将硅基板垂直放置在GZD下的反应器轴上。聚合物膜的厚度通过激光干涉仪控制。实验表明,在不填充另一种单体的情况下,两种单体进行共聚时的成膜速率明显大于单独聚合每种单体时的成膜速率。因此,已经证明了在放电后发光区(AGZD)中单体共聚的主要可能性。此外,在此过程中,等离子体中仅一种单体被激活,而另一种单体的结构得以保留。 !6

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