机译:电感耦合放电和衬底偏压的等离子体特性辅助超高频磁控溅射
Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China;
Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China|Soochow Univ, Key Lab Thin Films Jiangsu Prov, Suzhou 215006, Peoples R China;
Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China;
Soochow Univ, Coll Med, Suzhou 215123, Peoples R China;
Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China|Soochow Univ, Key Lab Thin Films Jiangsu Prov, Suzhou 215006, Peoples R China;
Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China;
Very high frequency sputtering; Inductively coupled plasma discharge; Radio-frequency substrate bias; Plasma property;
机译:衬底偏置电压对感应耦合氮等离子体辅助射频磁控溅射沉积氮化Film薄膜性能的影响
机译:衬底上偏压的频率和功率对超高频磁控溅射等离子体性能的影响
机译:衬底上偏压的频率和功率对超高频磁控溅射等离子体性能的影响
机译:氮化铬涂层通过电感耦合等离子体辅助RF磁控溅射
机译:使用能量和高能“快速”电子的密度测量亚稳态原子密度,电子能量分布函数中检测到与射频感应耦合等离子体氦放电产生的余辉等离子体相关的电子能量分布函数
机译:在不加热衬底的情况下通过射频磁控等离子体溅射沉积的铝掺杂氧化锌薄膜的空间分辨光电性能
机译:基板DC偏置电压对镍薄膜结构性能的依赖性,具有磁控溅射,具有电感耦合等离子体辅助的多极磁等离子体限制