Structures for the junction termination extension including extensions of the protective ring and the method of producing electronic components, which comprise the same

摘要

An electronic component has a semiconductor layer, a primary transition into the semiconductor layer, a slightly doped region, which surrounds the primary transition and a structure for the junction termination extension in the slightly doped region adjacent to the primary transition to. The structure for the junction termination extension has an upper limit, a lateral limit and a corner between the upper limit and the lateral boundary, and the slightly doped region extends in a first direction away from the primary transition and normal to a point at the upper limit by a first distance, which is less than a second distance by which the slightly doped region in a second direction away from the primary transition and normal to a point at the corner extends. At least a potential-free guard ring segment can be in the semiconductor layer on the outside of the corner of the structure be provided for the junction termination extension. Corresponding methods are likewise discloses.