A method of manufacturing a semiconductor device having a contact insert and a metallic recombination element and semiconductor device

摘要

In a semiconductor wafer (100), source zones (110) of a first conductivity type and body zones (120) of a second conductivity type are formed. The source zones (110) and the body zones (120) both adjoin a first surface (101) of the semiconductor wafer (100) in first sections. An impurity source (700) is provided in contact with the first portions of the first surface (101). The impurity source (700) is annealed so that atoms of a recombination metallic element diffuse from the impurity source (700) into the semiconductor wafer (100). Then, impurities (724) of the second conductivity type are introduced into the semiconductor wafer (100) to form body contact zones (121) between two adjacent source zones (110), respectively. The atoms of the recombination metallic element reduce the reverse recovery charge in the semiconductor wafer (100). The provision of body contact zones (121) after annealing the platinum source provides consistent and reliable body contacts.