Source zones of a first conductivity type and body zones of a second conductivity type are formed in a semiconductor die. The source zones directly adjoin a first surface of the semiconductor die. A dielectric layer adjoins the first surface. Polysilicon plugs extend through the dielectric layer and are electrically connected to the source and the body zones. An impurity source containing at least one metallic recombination element is provided in contact with deposited polycrystalline silicon material forming the polysilicon plugs and distant to the semiconductor die. Atoms of the metallic recombination element, for example platinum atoms, may be diffused out from the impurity source into the semiconductor die to reliably reduce the reverse recovery charge.
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