A method of forming a gate electrode of a semiconductor device, gate electrode structure for a semiconductor device and corresponding the semiconductor device structure

摘要

The present invention provides in some aspects a gate electrode structure ready for a semiconductor device. In some illustrative embodiments herein the gate electrode structure comprises a first high-k dielectric layer by means of a first active region of a semiconductor substrate and a second high-k dielectric layer on the first dielectric layer. The first high-k dielectric layer has a metal species incorporated in this for the adjustment of the work function of the first dielectric layer on high-k.