A substrate for electronic lithography has a high resolution and advantages of the lithography corresponding

摘要

The present invention relates to the electron beam lithography very high energy (50 kev or more). Provision is made according to the invention that the layer to be lithographically patterned is carried by a support structure which comprises a substrate 10 (for example silicon) and an intermediate layer 22 in the porous material of lower density than that of the same material which is not porous, this material having a low atomic number, less than 32 and preferably less than 20, and in particular of silicon or of the carbon nanotube. This structure reduces the influence of the back-scattered electrons on the patterns lithographed of high resolution.