首页> 外国专利> METHOD OF PRODUCING LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE FOR ELASTIC SURFACE WAVE ELEMENT AND LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE FOR ELASTIC SURFACE WAVE ELEMENT

METHOD OF PRODUCING LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE FOR ELASTIC SURFACE WAVE ELEMENT AND LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE FOR ELASTIC SURFACE WAVE ELEMENT

机译:弹性表面波元件的钽酸锂单晶基体的制备方法弹性表面波元件的钽酸锂单晶基体的制备方法

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a lithium tantalate single crystal substrate for an elastic surface wave element which has a pseudo-stoichiometric composition provided with a pyroelectricity preventive measure by subjecting a lithium tantalate single crystal substrate treated by a gas phase method to a pyroelectricity removal treatment and the lithium tantalate single crystal substrate for an elastic surface wave element.;SOLUTION: A method of producing a lithium tantalate single crystal substrate for an elastic surface wave element includes a first step of exposing a substrate having a congruent composition and a surface roughness of both sides of 100-500 nm to Li2O vapor to disperse Li from the surface of the substrate to the central part so as to modify the congruent composition to a pseudo-stoichiometric composition (composition change), a second step of applying a voltage to the substrate in the Z-axis direction, a third step of exposing the substrate to a reduction atmosphere to carry out a pyroelectricity removal treatment, and a fourth step of polishing the substrate. The more rough the substrate is, the more the modification and the modification in the depth direction progress well.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种用于弹性表面波元件的钽酸锂单晶基板的制造方法,该弹性表面波元件具有通过化学气相法处理的钽酸锂单晶基板,该假化学计量组成具有防止热电的措施。进行热电去除处理和用于弹性表面波元件的钽酸锂单晶衬底。;解决方案:一种用于弹性表面波元件的钽酸锂单晶衬底的制造方法包括第一步,将具有全组成的衬底曝光和Li 2 O蒸气的两面的表面粗糙度为100-500 nm,以将Li从基板表面分散到中心部分,从而将全组分改性为拟化学计量组成(组成变化),在Z轴方向上向基板施加电压的第二步骤,将基板暴露在外的第三步骤在还原气氛下,进行热电去除处理,对基板进行抛光的第四步。基材越粗糙,在深度方向上的修饰和修饰就越顺利。;版权所有:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2015098410A

    专利类型

  • 公开/公告日2015-05-28

    原文格式PDF

  • 申请/专利权人 SHIN ETSU CHEM CO LTD;

    申请/专利号JP20130238497

  • 申请日2013-11-19

  • 分类号C30B29/30;H03H3/08;H03H9/25;C30B33/02;C30B31/06;C30B33/04;

  • 国家 JP

  • 入库时间 2022-08-21 15:34:11

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