首页> 外国专利> PLASMA CVD FILM DEPOSITING MASK, PLASMA CVD FILM DEPOSITING METHOD, AND ORGANIC ELECTROLUMINESCENT ELEMENT

PLASMA CVD FILM DEPOSITING MASK, PLASMA CVD FILM DEPOSITING METHOD, AND ORGANIC ELECTROLUMINESCENT ELEMENT

机译:等离子CVD膜沉积膜,等离子CVD膜沉积方法和有机电致发光元件

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD film depositing mask with high uniformity of film thickness at an end, and corrosion resistance against washing gas almost without ingress influences.;SOLUTION: A plasma CVD film depositing mask 1 used when a film is deposited on a surface of a deposited material by a plasma CVD film depositing device comprises: a mask member 2 having a first opening part 21 formed at a predetermined position and a first non-opening part 22 forming the first opening part 21; and a metallic member 3 having a second opening part 31 opened at an almost identical shape to that of the first opening part 21 with a smaller opening dimension than that of the first opening part 21 at the identical opening position to the first opening part 21, and a second non-opening part 32 forming the second opening part 31 and coated with ceramic, and having a smaller thickness dimension that of the mask member 2.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种等离子体CVD膜沉积掩模,其在端部具有高的膜厚均匀性,并且几乎不受进入影响而具有对洗涤气体的耐腐蚀性。;解决方案:在沉积膜时使用的等离子体CVD膜沉积掩模1。在通过等离子体CVD膜沉积装置沉积的材料的表面上,包括:掩模构件2,其具有形成在预定位置的第一开口部分21和形成第一开口部分21的第一非开口部分22;金属部件3,其第二开口部31以与第一开口部21几乎相同的形状开口,并且在与第一开口部21相同的开口位置处具有比第一开口部21小的开口尺寸的开口尺寸,形成第二开口部31的第二非开口部32覆盖有陶瓷,且其厚度尺寸小于掩模构件2的厚度尺寸。版权所有:(C)2015,日本专利局&INPIT

著录项

  • 公开/公告号JP2014214367A

    专利类型

  • 公开/公告日2014-11-17

    原文格式PDF

  • 申请/专利权人 KONICA MINOLTA INC;

    申请/专利号JP20130094618

  • 申请日2013-04-26

  • 分类号C23C16/04;H05B33/10;H01L51/50;H05B33/04;

  • 国家 JP

  • 入库时间 2022-08-21 15:33:15

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