首页> 外国专利> -GALLIUM OXIDE BASED MONOCRYSTAL AND -GALLIUM OXIDE BASED MONOCRYSTAL BODY

-GALLIUM OXIDE BASED MONOCRYSTAL AND -GALLIUM OXIDE BASED MONOCRYSTAL BODY

机译:-基于氧化镓的单晶和-基于氧化镓的单晶体

摘要

PROBLEM TO BE SOLVED: To provide a -GaObased monocrystal which enables the formation of a region having superior conductivity, and a -GaObased monocrystal body.SOLUTION: According to an embodiment, a -GaObased monocrystal is provided which comprises: a first region having side faces and a bottom face and controlled to have a first donor concentration; and a second region embracing the side faces and the bottom face of the first region, and controlled to have a second donor concentration lower than the first donor concentration. In addition, a -GaObased monocrystal body is provided, which comprises: a first region having a first donor concentration and controlled in its shape in a plan view and the depth thereof; and a second region having a second donor concentration lower than the first donor concentration and controlled in an interface where the second region is in contact with the first one.
机译:解决的问题:提供一种能够形成具有优异导电性的区域的-GaO基单晶,以及一种-GaO基单晶体。解决方案:根据一个实施例,提供一种-GaO基单晶,其包括:具有侧面的第一区域面和底面并被控制为具有第一供体浓度;第二区域包围第一区域的侧面和底面,并被控制为具有比第一施主浓度低的第二施主浓度。另外,提供了一种基于-GaO的单晶体,该单晶体包括:第一区域,该第一区域具有第一施主浓度,并且在平面图中及其深度受到控制。第二区域具有比第一施主浓度低的第二施主浓度,并且在第二区域与第一施主接触的界面中被控制。

著录项

  • 公开/公告号JP2015179850A

    专利类型

  • 公开/公告日2015-10-08

    原文格式PDF

  • 申请/专利权人 TAMURA SEISAKUSHO CO LTD;

    申请/专利号JP20150092979

  • 发明设计人 SASAKI KOHEI;

    申请日2015-04-30

  • 分类号H01L21/425;C30B29/16;H01L21/265;

  • 国家 JP

  • 入库时间 2022-08-21 15:32:47

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