首页> 外国专利> Doping through shielded electrical contacts and passivated dielectric layers in high efficiency crystalline solar cells, and their structure and manufacturing method

Doping through shielded electrical contacts and passivated dielectric layers in high efficiency crystalline solar cells, and their structure and manufacturing method

机译:高效晶体太阳能电池中通过屏蔽电触点和钝化电介质层掺杂及其结构和制造方法

摘要

Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency.
机译:利用表面纹理与钝化介电层相结合的太阳能电池结构和形成方法,提供了一种实用且可控制的技术,可通过钝化介电层在导电层和下层基板之间形成电接触,从而实现良好的表面钝化和电高效太阳能电池所需的低重组损失的接触。故意修改钝化电介质层以允许与基板直接接触或隧道势垒接触。公开了另外的P-N结和掺杂剂梯度以进一步限制损耗并提高效率。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号