首页> 外国专利> SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE SOLAR CELL, INCLUDING STRUCTURE AND METHODS OF MANUFACTURE

SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE SOLAR CELL, INCLUDING STRUCTURE AND METHODS OF MANUFACTURE

机译:高效的晶体太阳能电池中钝化层的屏蔽电接触和贯穿,包括结构和制造方法

摘要

Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency.
机译:利用表面纹理与钝化介电层相结合的太阳能电池结构和形成方法,提供了一种实用且可控制的技术,可通过钝化介电层在导电层和下层基板之间形成电接触,从而实现良好的表面钝化和电高效太阳能电池所需的低重组损失的接触。故意修改钝化电介质层以允许与基板直接接触或隧道势垒接触。公开了另外的P-N结和掺杂剂梯度以进一步限制损耗并提高效率。

著录项

  • 公开/公告号EP3309845A2

    专利类型

  • 公开/公告日2018-04-18

    原文格式PDF

  • 申请/专利权人 TETRASUN INC.;

    申请/专利号EP20170201715

  • 发明设计人 CRAFTS DOUGLAS E.;SCHULTZ-WITTMAN OLIVER;

    申请日2011-03-25

  • 分类号H01L31/042;H01L31/0236;H01L31/06;H01L31/18;H01L31/0216;H01L31/0224;H01L31/0352;

  • 国家 EP

  • 入库时间 2022-08-21 13:16:27

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