首页> 外国专利> Integrated circuit structure having through substrate via and method of forming integrated circuit structure having through substrate via

Integrated circuit structure having through substrate via and method of forming integrated circuit structure having through substrate via

机译:具有衬底通孔的集成电路结构和形成具有衬底通孔的集成电路结构的方法

摘要

An integrated circuit structure includes a stack of two or more integrated circuit substrates. At least one of the substrates includes through substrate vias (TSVs) that individually include opposite ends. The conductive bond pad is adjacent to one of the edges on one side of the substrate. The conductive solder mass is adjacent to the other end protruding in the height direction on the other side surface of one substrate. Individual solder masses are bonded to respective bond pads on the immediately adjacent substrate of the stack. Epoxy flux surrounds individual solder masses. Epoxy materials that differ in composition from the epoxy flux surround the epoxy flux on individual solder masses. A method of forming an integrated circuit structure is also disclosed. [Selection] Figure 1
机译:集成电路结构包括两个或更多个集成电路基板的堆叠。基板中的至少一个包括基板通孔(TSV),其分别包括相对的端部。导电结合垫邻近衬底的一侧上的边缘之一。导电焊料块与在一个基板的另一侧面上沿高度方向突出的另一端相邻。各个焊料块被粘结到堆叠的紧邻基板上的各个焊盘上。环氧助焊剂围绕着各个焊料块。成分不同于环氧助焊剂的环氧材料围绕着各个焊料块上的环氧助焊剂。还公开了一种形成集成电路结构的方法。 [选择]图1

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号