首页> 外文会议> >Modeling of 3-D planar conducting structures on lossy silicon substrate in high frequency integrated circuits
【24h】

Modeling of 3-D planar conducting structures on lossy silicon substrate in high frequency integrated circuits

机译:高频集成电路中有损硅衬底上的3-D平面导电结构建模

获取原文

摘要

This paper describes simple yet accurate models for 3-D planar conducting structures such as substrate contacts and bond pads in high frequency and mixed-signal integrated circuits on lossy silicon substrate. The modeling approach is based on a rigorous 3-D EM characterization followed by equivalent circuit model extraction. The simple equivalent circuit models for coupled conducting structures are based on the physical structure. The frequency response of the models shows good agreement with the EM solution.
机译:本文介绍了用于3-D平面导电结构的简单且精确的模型,例如在有损硅衬底上的高频和混合信号集成电路中的基板触点和粘接焊盘。建模方法基于严格的3-D EM表征,然后是等效电路模型提取。用于耦合导电结构的简单等效电路模型基于物理结构。模型的频率响应与EM解决方案显示了良好的一致性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号