Group III nitride semiconductor laser device and method for manufacturing group III nitride semiconductor laser device

摘要

Provided is a III-nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar plane of a support base tilting from the c-axis toward the m-axis of a hexagonal III-nitride. The laser structure 13 has first and second recesses 28, 30 provided each at a portion of edge 13c of the first surface 13a in a fractured face. The first and second recesses 28, 30 include first and second scribed marks, respectively, left in each semiconductor device separated by fracture guided by scribed grooves. The first recess 28 has an end 28b at the first surface 13a, and the second recess 30 has an end 30b at the first surface 13 a. A first distance W1 between the end 28b of the first recess 28 and the laser stripe is smaller than a second distance W2 between the end 30b of the second recess 30 and the laser stripe.