Method for forming a double gate and tri-gate transistor and the transistor formed on a bulk substrate

摘要

[MEANS FOR SOLVING PROBLEMS] It is possible that three-dimensional transistor structures, such as tri-gate transistor and FinFETS is formed by masking the form of being strengthened, thereby drain and source areas in a self-aligned manner is in the bulk semiconductor material within (211D, 211S), fin ( forming isolation structures (208A) is possible, as well as 210). It is possible that, after defining the (210) base fin structure, it is possible to use manufacturing techniques highly efficient planar transistor structure, to further enhance the overall performance of the three-dimensional transistor structure thereby. [Selection Figure FIG 2p