DOUBLE GATE AND TRI-GATE TRANSISTOR FORMED ON A BULK SUBSTRATE AND METHOD FOR FORMING THE TRANSISTOR

摘要

FinFET and triple gate transistors 3D transistor structures can be formed based on an improved masking method, so that the bulk in the semiconductor bite magnetic, such as drain and source areas in alignment s (211D, 211S), may form the pins 210, and isolation structures (208A). Basic defined a fin structure 210, and a technology for highly efficiently producing a planar transistor configurations may be used, so that there can be even more improved the overall performance of the three-dimensional transistor configuration. ;