Polycrystalline semiconductor material , a method for controlling the temperature of the device and within the device to get especially silicon.

摘要

The device in order to acquire polycrystal silicon (1) is: The volva which one which is made with quartz vis-a-vis that silicon, the graphite container of cup form in (4) is enclosed removably drives at least (3); The casing whose it is possible fluid sealing to open, (5); When the graphite plate (14) has lain between facing in the pot, in the bottom wall (19) of the flank induction coil (16), and its graphite container which are laid out around the side wall (17) of the upper induction coil (12) and the graphite container which are laid out facing, it is laid out, distance from that bottom wall the cartridge head induction coil (18) which is working vertically in order alteration (D); And 2nd means (21) in order to supply the refrigerant 1st means (20) for alternating current power supply of the induction coil, and while the respective hollow winding of those induction coils; Winding (31 - 34) four spiral conditions which are laid out mutually parallel completely in identical it includes, as for that cartridge head induction coil, following to grid handle scheme, is decided by the support play poly (35) insulating plane surface implication; Electric switching means (40) following the four winding (31 - 34) to the configuration which differs in while using, make that you joint mutually choice possible.