A method of making a semiconductor device with an active zone is made from polycrystalline silicon.

摘要

ABSTRACT OF THE DISCLOSUREA thin film semiconductor device with apolycrystalline silicon film forming an active channelregion, a source region and a drain region, isencapsulated in a passivation layer which also serves asa source of free hydrogen. Migration of hydrogen intothe active region improves the effective carriermobility, the threshold voltage and the gate voltage ofthe device by reducing carrier trap density thereof. Thepassivation layer is activated during annealing to drivehydrogen through porous or transmissive layers of thedevice to the active region. Effective mobilities of upto 100 cm2/V sec can be achieved in the preferredconstruction. The semiconductor device can befabricated in the form of IC chips.