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N/P MOS FINFET PERFORMANCE ENHANCEMENT BY SPECIFIC ORIENTATION SURFACE
N/P MOS FINFET PERFORMANCE ENHANCEMENT BY SPECIFIC ORIENTATION SURFACE
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机译:通过特定定向表面增强N / P MOS FINFET性能
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摘要
As will be appreciated in more detail herein, the present disclosure provides for FinFET techniques whereby a FinFET channel region has a particular orientation with respect to the crystalline lattice of the semiconductor device to provide enhanced mobility, compared to conventional FinFETs. In particular, the present disclosure provides FinFETs with a channel region whose lattice includes silicon atoms arranged on (551) lattice plane. In this configuration, the sidewalls of the channel region are particularly smooth at the atomic level, which tends to promote higher carrier mobility and higher device performance than previously achievable.
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