step 1) fabricating a template for producing nanowires in which the template comprises an alternating multilayer stack of thin film substrate layers and inert insulating thin film layers using atomic layer deposition; andstep 2) fabricating a relatively large uniformly aligned planar array of nanowires by depositing atoms or molecules along the thin film substrate layers on at least one side of the template with the use of atomic layer deposition."/> Method of Fabricating a Uniformly Aligned Planar Array of Nanowires Using Atomic Layer Deposition
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Method of Fabricating a Uniformly Aligned Planar Array of Nanowires Using Atomic Layer Deposition

机译:使用原子层沉积制造均匀排列的纳米线平面阵列的方法

摘要

Invention for producing a relatively large uniformly aligned planar array of nanowires comprising:step 1) fabricating a template for producing nanowires in which the template comprises an alternating multilayer stack of thin film substrate layers and inert insulating thin film layers using atomic layer deposition; andstep 2) fabricating a relatively large uniformly aligned planar array of nanowires by depositing atoms or molecules along the thin film substrate layers on at least one side of the template with the use of atomic layer deposition.
机译:用于生产相对较大的均匀排列的纳米线平面阵列的发明,包括: 步骤1)制备用于生产纳米线的模板,其中该模板包括使用原子层沉积的薄膜基板层和惰性绝缘薄膜层的交替多层堆叠;和 步骤2),通过在薄膜衬底层的至少一侧上沉积原子或分子来制造相对较大的均匀排列的纳米线平面阵列。模板使用原子层沉积。

著录项

  • 公开/公告号US2015132489A1

    专利类型

  • 公开/公告日2015-05-14

    原文格式PDF

  • 申请/专利权人 STEVEN HOWARD SNYDER;

    申请/专利号US201414479760

  • 发明设计人 STEVEN HOWARD SNYDER;

    申请日2014-09-08

  • 分类号C23C16/04;C23C16/455;

  • 国家 US

  • 入库时间 2022-08-21 15:26:33

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