...
首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Combining atomic layer deposition with a template-assisted approach to fabricate size-reduced nanowire arrays on substrates and their electrochemical characterization
【24h】

Combining atomic layer deposition with a template-assisted approach to fabricate size-reduced nanowire arrays on substrates and their electrochemical characterization

机译:结合原子层沉积与模板辅助方法在基板上制备尺寸减小的纳米线阵列及其电化学表征

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

We report a combinational method to fabricate well-aligned size-reduced gold nanowire (Au NW) arrays on a Si substrate over large areas (> 1.5 cm(2)). In this method, we employ a SiO2 atomic layer deposition (ALD) technique to reduce the pores of a porous anodic alumina (PAA) template which serves as a template for the electrodeposition of Au NW arrays and is directly integrated on the Si substrate. Unlike conventional method that simultaneously reduces the pore size and the interpore spacing by decreasing the applied potential during PAA anodization, our method allows for independently tuning these parameters. By using the ALD-reduced PAA template, we can fabricate the size-reduced Au NW arrays directly on the Si substrate with the average diameter reduced from similar to 79 to similar to 33 nm while their nanowire density and interwire spacing remain constant. The ALD technique enables the fine-tuning of the pore size or the nanowire diameter at an angstrom scale. Electrochemical characterization of the size-reduced Au NW arrays as nanoelectrodes is performed. The double-layer charging current (noise of the nanoelectrodes) decreases with the reduction of the nanowire diameter. Our method could be used to fabricate nanowire arrays with large spacing and small diameters via high voltage anodization and subsequent ALD reduction on the PAA template. This type of nanowire arrays might have potential applications in electrochemical and field-emission devices.
机译:我们报告了一种组合方法,可在大面积(> 1.5 cm(2))的Si基板上制造尺寸齐备的尺寸减小的金纳米线(Au NW)阵列。在这种方法中,我们采用SiO2原子层沉积(ALD)技术来减少多孔阳极氧化铝(PAA)模板的孔,该模板用作电沉积Au NW阵列的模板,并直接集成在Si衬底上。与通过在PAA阳极氧化过程中降低施加电位同时减小孔径和孔间距的传统方法不同,我们的方法允许独立调整这些参数。通过使用ALD减小的PAA模板,我们可以直接在Si衬底上制造尺寸减小的Au NW阵列,平均直径从相似的79纳米减小到相似的33 nm,同时它们的纳米线密度和线间间距保持恒定。 ALD技术能够以埃为尺度微调孔径或纳米线的直径。减小尺寸的金纳米线阵列作为纳米电极的电化学表征。双层充电电流(纳米电极的噪声)随着纳米线直径的减小而减小。我们的方法可用于通过高压阳极氧化和随后在PAA模板上进行ALD还原来制造具有大间距和小直径的纳米线阵列。这种类型的纳米线阵列可能在电化学和场发射器件中具有潜在的应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号