首页> 外国专利> USE OF INVERSE QUASI-EPITAXY TO MODIFY ORDER DURING POST-DEPOSITION PROCESSING OR ORGANIC PHOTOVOLTAICS

USE OF INVERSE QUASI-EPITAXY TO MODIFY ORDER DURING POST-DEPOSITION PROCESSING OR ORGANIC PHOTOVOLTAICS

机译:在沉积后处理或有机光伏过程中使用逆拟表位修改顺序

摘要

Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.
机译:本文公开了用于制造有机光伏器件的方法,该方法包括在第一电极上沉积非晶有机层和晶体有机层,其中非晶有机层和晶体有机层在界面处彼此接触;使非晶态有机层和结晶有机层退火足够长的时间,以在非晶态有机层中引起至少部分结晶度;在非晶有机层和结晶有机层上沉积第二电极。在本文的方法和装置中,无定形有机层可以包括至少一种由于退火而与晶体有机层的材料进行准准外延(IQE)取向的材料。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号