RESISTIVE SWITCHING MEMORY DEVICE HAVING IMPROVED NONLINEARITY AND METHOD OF FABRICATING THE SAME

摘要

A nonvolatile resistive switching memory (ReRAM) device having no selection device is provided. The ReRAM device includes a lower electrode that is formed on on a substrate; a metal oxide layer that is formed on the lower electrode, the metal oxide layer having a resistive switching characteristic; an upper electrode that is formed on the metal oxide layer; and a tunnel barrier oxide film that is formed between the lower electrode and the metal oxide layer, thereby forming a double oxide film structure, the tunnel barrier oxide film being made of a material, a band energy gap and a conduction band offset of which are lower than those of the metal oxide layer, and which does not cause interface switching.