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High Productivity Combinatorial material screening for stable, high-mobility non-silicon thin film transistors
High Productivity Combinatorial material screening for stable, high-mobility non-silicon thin film transistors
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机译:高生产率的组合材料筛选,用于稳定,高迁移率的非硅薄膜晶体管
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摘要
Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor deposition, metal-based patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.
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