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Controlled Ion Implantation Into Silicon Carbide Using Channeling And Devices Fabricated Using Controlled Ion Implantation Into Silicon Carbide Using Channeling
Controlled Ion Implantation Into Silicon Carbide Using Channeling And Devices Fabricated Using Controlled Ion Implantation Into Silicon Carbide Using Channeling
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机译:利用沟道将离子注入碳化硅中的方法以及利用沟道将离子注入碳化硅中制备的器件的方法
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摘要
Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° C. or more, implanting dopant ions into the heated silicon carbide layer at an implant angle between a direction of implantation and the crystallographic axis of less than about 2°, and annealing the silicon carbide layer at a time-temperature product of less than about 30,000° C.-hours to activate the implanted ions.
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