首页> 外国专利> FINGER STRUCTURES PROTRUDING FROM ABSORBER LAYER FOR IMPROVED SOLAR CELL BACK CONTACT

FINGER STRUCTURES PROTRUDING FROM ABSORBER LAYER FOR IMPROVED SOLAR CELL BACK CONTACT

机译:从吸收层伸出的指状结构可改善太阳能电池的背面接触

摘要

Thin film photovoltaic devices that include a transparent substrate; a transparent conductive oxide layer on the transparent substrate; a n-type window layer on the transparent conductive oxide layer; a p-type absorber layer on the n-type window layer; and, a back contact on the p-type absorber layer are provided. The p-type absorber layer comprises cadmium telluride, and forms a photovoltaic junction with the n-type window layer. Generally, the p-type absorber layer defines a plurality of finger structures protruding from the p-type absorber layer into the back contact. The finger structures can have an aspect ratio of about 1 or greater and/or can have a height that is about 20% to about 200% of the thickness of the p-type absorber layer. Methods of forming such finger structures protruding from a back surface of the p-type absorber layer are also provided.
机译:薄膜光伏器件,包括透明基板;透明基板上的透明导电氧化物层;透明导电氧化物层上的n型窗口层;在n型窗口层上的p型吸收层;并且,在p型吸收体层上设置背接触。 p型吸收层包括碲化镉,并与n型窗口层形成光伏结。通常,p型吸收层限定从p型吸收层突出到背接触中的多个指状结构。指状结构可具有约1或更大的纵横比和/或可具有为p型吸收层的厚度的约20%至约200%的高度。还提供了形成从p型吸收层的背面突出的指状结构的方法。

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