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Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof
Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof
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机译:自校正RRAM单元结构及其3D交叉开关阵列结构
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摘要
The present disclosure provides a self-rectifying RRAM, including: a first electrode layer formed of a first metal element; a second electrode layer formed of a second metal element different from the first metal element; and a first resistive-switching layer and a second resistive-switching layer sandwiched between the first electrode layer and the second electrode layer, wherein the first resistive-switching layer and the second switching layer form an ohmic contact, and the first resistive-switching layer has a first bandgap lower than a second bandgap of the second resistive-switching layer. Furthermore, an RRAM 3D crossbar array architecture is also provided.
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