Self-rectifying resistive switching phenomena observed in Ti/ZrN/Pt/p-Si structures for crossbar array memory applications

摘要

In this Letter, the self-rectifying resistive switching (RS) behavior is demonstrated in Ti/ZrN/Pt/p-Si resistive random access memory (RRAM) devices. Compared to an RS characteristic of the conventional Ti/ZrN/Pt structures, the memory cell with a p-Si bottom layer shows a larger current ratio. However, a current-limited region is also more clearly obtained in a low voltage region, which can result in one diode-type RRAM with self-selecting properties. Consequently, these results infer that the proposed ZrN-based RRAM cells with a Pt/p-Si selector warrant the realization of the self-selecting RRAM cell without any additional peripheral elements to suppress a disturbance in the reading operation.