首页>
外国专利>
Semiconductor device with single-event latch-up prevention circuitry
Semiconductor device with single-event latch-up prevention circuitry
展开▼
机译:具有单事件闩锁防止电路的半导体器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device includes a parasitic silicon-controlled rectifier (SCR) and a first transistor. The parasitic SCR includes a parasitic pnp bipolar junction transistor (BJT) and a parasitic npn BJT. The first transistor is coupled between a first power supply node and an emitter of the parasitic pnp BJT. The first transistor includes a first terminal coupled to the first power supply node, a second terminal coupled to the emitter of the parasitic pnp BJT, and a control terminal. The first transistor is not positioned between a base of the pnp BJT and the first power supply node. The first transistor limits current conducted by the parasitic pnp BJT following a single-event latch-up (SEL) event.
展开▼