Investigation of maximum proton energy for qualified ground-based evaluation of single-event effects in SRAM devices

摘要

Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV.This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy.The inner mechanisms are further revealed.Highenergy deposition events (＞ 10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.