3.15 Investigation of Nuclear Reaction Data for Analyses of Single-Event Effects in Semiconductor Devices

摘要

We have investigated the effect of simultaneous multiple ions emission in neutron-induced reactions on single-event upsets (SEUs) and the relative importance of elastic scattering in SEUs in order to develop a nuclear reaction database of Si suitable for SEU microscopic simulation. Proton-induced SEU cross sections are calculated using a simplified empirical model that uses experimental heavy-ion induced SEU cross-sections and nuclear data for proton-induced reactions. In addition, an integral test of the proton nuclear data used is carried out though analyses of the energy deposition spectrum measured by bombardment of protons on a fully depleted surface barrier detector.