首页>
外国专利>
Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS
Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS
展开▼
机译:PMOS和NMOS具有相同沟道和势垒配置的异质结构场效应晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
In accordance with one or more embodiments, an apparatus and method involves a channel region, barrier layers separated by the channel region and a dielectric on one of the barrier layers. The barrier layers have band gaps that are different than a band gap of the channel region, and confine both electrons and holes in the channel region. A gate electrode applies electric field to the channel region via the dielectric. In various contexts, the apparatus and method are amenable to implementation for both electron-based and hole-based implementations, such as for nmos, pmos, and cmos applications.
展开▼