首页> 外国专利> Ultra-thin metal oxide and carbon-metal oxide films prepared by atomic layer deposition (ALD)

Ultra-thin metal oxide and carbon-metal oxide films prepared by atomic layer deposition (ALD)

机译:通过原子层沉积(ALD)制备的超薄金属氧化物和碳金属氧化物薄膜

摘要

Ultra-thin porous films are deposited on a substrate in a process that includes laying down an organic polymer, inorganic material or inorganic-organic material via an atomic layer deposition or molecular layer deposition technique, and then treating the resulting film to introduce pores. The films are characterized in having extremely small thicknesses of pores that are typically well less than 50 nm in size.
机译:通过包括通过原子层沉积或分子层沉积技术沉积有机聚合物,无机材料或无机-有机材料的工艺将超薄多孔膜沉积在基板上,然后处理所得的膜以引入孔。该膜的特征在于具有极小厚度的孔,其通常远小于50nm。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号