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Chemical and Structural Configuration of Pt-Doped Metal Oxide Thin Films Prepared by Atomic Layer Deposition

机译:用原子层沉积制备的Pt掺杂金属氧化物薄膜的化学和结构构型

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摘要

y Pt-doped semiconducting metal oxides and Pt metal clusters embedded in an oxide matrix are of interest for applications such as catalysis and gas sensing, energy storage, and memory devices. Accurate tuning of the dopant level is crucial for adjusting the properties of these materials. Here, a novel atomic layer deposition (ALD)-based method for doping Pt into In2O3 specifically, and metals in metal oxides in general, is demonstrated. This approach combines alternating exposures of Pt and In2O3 ALD processes in a single "supercycle" followed by supercycle repetition leading to multilayered nanocomposites. The atomic-level control of ALD and its conformal nature make the method suitable for accurate dopant control even on high-surface-area supports. The oxidation state, local structural environment, and crystalline phase of the embedded Pt dopants were obtained by means of X-ray characterization methods and high-angle annular dark-field scanning transmission electron microscopy. In addition, this approach allows characterization of the nucleation stages of metal ALD processes by stacking those states multiple times in an oxide matrix. Regardless of experimental conditions, a few Pt ALD cycles lead to the formation of oxidized Pt species due to their highly dispersed nature, as proven by X-ray absorption spectroscopy. Grazing-incidence small-angle X-ray scattering and high-resolution scanning transmission electron microscopy, combined with energy-dispersive X-ray spectroscopy, show that Pt is evenly distributed in the In2O3 matrix without the formation of clusters. For a larger number of Pt ALD cycles, typically >10, the oxidation state gradually evolves toward fully metallic, and metallic Pt clusters are obtained within the In2O3 matrix. This work reveals how tuning of the ALD supercycle approach for Pt doping allows controlled engineering of the Pt compositional and structural configurations within a metal oxide matrix.
机译:Y Pt掺杂的半导体金属氧化物和嵌入氧化物基质中的Pt金属簇对诸如催化和气体传感,能量存储和存储器装置的应用感兴趣。掺杂剂水平的精确调谐对于调节这些材料的性质至关重要。这里,证明了一种用于将Pt掺杂到In2O 3中的新的原子层沉积(ALD)的方法,以及通常的金属氧化物中的金属。这种方法将Pt和In2O3 ALD过程的交替暴露在单个“超循环”中结合,其次是通向多层纳米复合材料的超级循环重复。 ALD的原子水平控制及其保形性质使得即使在高表面积支撑件上也适用于精确掺杂剂控制的方法。通过X射线表征方法和大角度环形暗场扫描透射电子显微镜获得嵌入Pt掺杂剂的氧化状态,局部结构环境和结晶相。此外,该方法通过在氧化物基质中多次堆叠这些状态,允许表征金属ALD过程的成核阶段。无论实验条件如何,由于X射线吸收光谱证明,少数Pt ALD循环导致由于其高度分散的性质而形成氧化Pt物质。放牧发生小角X射线散射和高分辨率扫描透射电子显微镜,与能量分散X射线光谱相结合,表明PT均匀地分布在IN2O3基质中而不形成簇。对于较大数量的Pt ALD循环,通常> 10,氧化态逐渐发展朝向完全金属,并且在IN2O3基质中获得金属PT簇。这项工作揭示了如何调整PT掺杂的ALD超循环方法,允许在金属氧化物基质中进行PT组成和结构配置的受控工程。

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    Univ Ghent Dept Solid State Sci Conformal Coating Nanostruct CoCooN Krijgslaan 281 S1 B-9000 Ghent Belgium;

    Univ Ghent Lab Chem Technol Technol Pk 125 B-9052 Ghent Belgium;

    Univ Ghent Dept Solid State Sci Conformal Coating Nanostruct CoCooN Krijgslaan 281 S1 B-9000 Ghent Belgium;

    Univ Ghent Lab Chem Technol Technol Pk 125 B-9052 Ghent Belgium;

    Univ Ghent Dept Solid State Sci Conformal Coating Nanostruct CoCooN Krijgslaan 281 S1 B-9000 Ghent Belgium;

    Univ Ghent Dept Solid State Sci Conformal Coating Nanostruct CoCooN Krijgslaan 281 S1 B-9000 Ghent Belgium;

    Univ Ghent Dept Solid State Sci Conformal Coating Nanostruct CoCooN Krijgslaan 281 S1 B-9000 Ghent Belgium;

    Univ Antwerp Electron Microscopy Mat Sci EMAT Groenenborgerlaan 171 B-2020 Antwerp Belgium;

    Univ Antwerp Electron Microscopy Mat Sci EMAT Groenenborgerlaan 171 B-2020 Antwerp Belgium;

    SAMBA Beamline BP48 F-91192 Gif Sur Yvette France;

    Synchrotron SOLEIL SixS Beamline BP48 F-91192 Gif Sur Yvette France;

    Synchrotron SOLEIL SixS Beamline BP48 F-91192 Gif Sur Yvette France;

    Univ Antwerp Electron Microscopy Mat Sci EMAT Groenenborgerlaan 171 B-2020 Antwerp Belgium;

    Univ Ghent Lab Chem Technol Technol Pk 125 B-9052 Ghent Belgium;

    Univ Ghent Dept Solid State Sci Conformal Coating Nanostruct CoCooN Krijgslaan 281 S1 B-9000 Ghent Belgium;

    Univ Ghent Dept Solid State Sci Conformal Coating Nanostruct CoCooN Krijgslaan 281 S1 B-9000 Ghent Belgium;

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  • 正文语种 eng
  • 中图分类 工程材料学;
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