The Surface Chemistry of Atomic Layer Deposition (ALD) Processes for Metal Nitride and Metal Oxide Film Growth

摘要

Thin films of titanium nitride (TiN) and titanium oxide (TiO_2) have a wide range of potential applications. Titanium nitride is a material that could be used as a copper diffusion barrier in microelectronic applications (1-3), and, because of its low resistivity and high thermal stability, as a capacitor electrode material in dynamic random access memories (DRAM) and as a metal gate in complementary metal oxide semiconductors (CMOS) (4-6). Titanium oxide has a relatively high dielectric constant, and has recently been investigated for use as a high-k gate oxide in metal oxide semiconductor field effect transistors (MOSFET) and DRAM capacitors (7,8). Titanium oxide also has a high refractive index and excellent transmittance in the visible and near-IR regions, properties that render it useful for anti-reflection coating in sensors and photocatalysts (9-11).