A superjunction device includes a substrate having first and second main surfaces and a first doping concentration of a first dopant. A first semiconductor layer having a second doping concentration of the first dopant is formed on the substrate. A second semiconductor layer is formed on the first layer and has a main surface. At least one trench extends from the main surface at least partially into the first semiconductor layer. A first region having a third doping concentration of the first dopant extends at least partially between the main surface and the first layer. A second region having a fourth doping concentration of a second dopant is disposed between the first region and a trench sidewall and extends at least partially between the main surface and the first layer. A third region having a fifth doping concentration of the first dopant is disposed proximate the main surface.
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