首页> 外国专利> Semiconductor memory device having electrically floating body transistor, semiconductor memory device having both volatile and non-volatile functionality and method or operating

Semiconductor memory device having electrically floating body transistor, semiconductor memory device having both volatile and non-volatile functionality and method or operating

机译:具有电浮体晶体管的半导体存储器件,具有易失性和非易失性功能性的半导体存储器件以及方法或操作

摘要

A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with said floating body region; a second region in electrical contact with said floating body region and spaced apart from said first region; and a gate positioned between said first and second regions. The cell may be a multi-level cell. Arrays of memory cells are disclosed for making a memory device. Methods of operating memory cells are also provided.
机译:半导体存储单元包括:浮体区域,被配置为被充电至指示该存储单元的状态的电平;以及与所述浮体区域电接触的第一区域;与所述浮体区域电接触并与所述第一区域间隔开的第二区域;栅极位于所述第一和第二区域之间。该单元可以是多层单元。公开了用于制造存储装置的存储单元的阵列。还提供了操作存储单元的方法。

著录项

  • 公开/公告号US9153309B2

    专利类型

  • 公开/公告日2015-10-06

    原文格式PDF

  • 申请/专利权人 YUNIARTO WIDJAJA;ZVI OR-BACH;

    申请/专利号US201113577282

  • 发明设计人 YUNIARTO WIDJAJA;ZVI OR-BACH;

    申请日2011-02-07

  • 分类号G11C14;G11C11/404;H01L27/108;H01L29/66;H01L29/78;H01L29/788;G11C11/56;G11C16/04;

  • 国家 US

  • 入库时间 2022-08-21 15:18:23

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