Method of fabricating memory device with charge storage layer at gap located side of gate dielectric underneath the gate

摘要

A method for fabricating a memory device of this invention includes at least the following steps. A tunnel dielectric layer is formed over a substrate. A gate is fowled over the tunnel dielectric layer. At least one charge storage layer is formed between the gate and the tunnel dielectric layer. Two doped regions are formed in the substrate beside the gate. A word line is formed on and electrically connected to the gate, wherein the word line having a thickness greater than a thickness of the gate.