FLOATING GATE HAVING MULTIPLE CHARGE STORING LAYERS, METHOD FOR FABRICATING THE FLOATING GATE, NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE USING THE SAME

摘要

A floating gate having multiple charge storing layers, a method for fabricating the floating gate, a non-volatile memory device and a method for fabricating the non-volatile memory device using the same are provided to improve the charge storage capacity of the non-volatile memory device by laminating polyelectrolyte and metal nano crystal in multilayer. A gate structure is formed on the upper side of a silicon substrate(10). The gate structure comprises a tunneling oxide film(11), a floating gate(20) having charge storage layers(12a,13a-12n,13n) of multilayer, a control oxide film(14), and a control gate(15). A source region and a drain region doped with the impurity are formed in the silicon substrate. A channel region is formed between the source region and the drain region. The floating gate is formed on the top of the tunneling oxide film through the self-assembly method. The floating gate is made of the charge storage layer of multilayer.